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Light Emission from Quantum-Dot-Like Structures in Cubic GaN/InGaN/GaN Double Heterostructures and Quantum Wells

Published online by Cambridge University Press:  21 March 2011

K. Lischka
K. Lischka*
Affiliation:
University of Paderborn, Department of Physics, 33095 Paderborn/Germany lischka@physik.uni-paderborn.de
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Abstract

Recent results of experimental investigations of cubic GaN/InGaN/GaN double heterostructures grown by molecular beam epitaxy are reviewed. Micro-Raman effect, photoluminescence and photoluminescence excitation spectroscopy as well as high-resolution x-ray diffraction measurements reveal clear evidence that the photoluminescence of these double heterostructures is related to In-rich quantum dot-like structures which are embedded within the InGaN layers. Annealing experiments corroborate the assumption that the formation of the In-rich clusters is terminated already during the growth process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I7.1.1
Copyright
Copyright © Materials Research Society 2002

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