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Light-Emitting nm-Size Silicon Using Electrochemical Anodization and Oxidation
Published online by Cambridge University Press: 28 February 2011
Abstract
Porous silicon oxidized by thermal, anodic and plasma processes has been investigated mainly using transmission microscopy, ion scattering techniques for compositional depth analysis (including H) and photoluminescence (PL) measurements. Suitable thermal oxidation of PS can increases in PL peak energy: the largest peak energy attained in the present study is 2.6eV (475nm). In the case of anodic oxidation, PL excitation spectra measured suggest the presence of some effect other than the quantum confinement effect at the initial oxidation stage while the latter may be effective at the subsequent anodic oxidation stage and in the thermal oxidation process. Electroluminescence was also observed from the oxidized porous silicon.
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- Copyright © Materials Research Society 1993
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