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Light-Induced Metastable Defects in a-Si:H: Towards an Understanding

Published online by Cambridge University Press:  28 February 2011

Martin Stutzmann ,
Warren B. Jackson  and
Chuang Chuang Tsai
Martin Stutzmann
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
Warren B. Jackson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
Chuang Chuang Tsai
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

The dependence of the creation and the annealing of metastable dangling bonds in hydrogenated amorphous silicon on various material parameters will be discussed in the context of a recently proposed model. After a brief review of the kinetic behaviour governing defect creation and annealing in undoped a- Si:H, a number of special cases will be analyzed: the influence of alloying with O, N, C, and Ge, changes introduced by doping and compensation, and the role of mechanical stress. Finally, possibilities to increase the stability of a-Si:H based devices will be examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 301
Copyright
Copyright © Materials Research Society 1985

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References

[1] Neufville, J.P. de, in Optical Properties of Solids - New Developments, edited by Seraphin, B.O. (North-Holland, Amsterdam, 1976)Google Scholar
[2] Staebler, D.L., Wronski, C.R., Appl. Phys. Lett. 31, 292 (1977)Google Scholar
[3] Morigaki, K., Hirabayashi, I., Nakayama, M., Nitta, S., Shimakawa, K., Sol. State Commun. 33, 851 (1980)CrossRefGoogle Scholar
[4] Dersch, H., Stuke, J., Beichler, J., Appl. Phys. Lett. 38, 456 (1980)CrossRefGoogle Scholar
[5] Stutzmann, M., Jackson, W.B., Tsai, C.C., Appl. Phys. Lett. 45, 1075 (1984)Google Scholar
[6] Stutzmann, M., Jackson, W.B., Tsai, C.C., Phys. Rev. B, to be publishedGoogle Scholar
[7] Tsai, C.C., Knights, J.C., Lujan, R.A., Wacker, B., Stafford, B.L., Thompson, M.J., J. Non-Cryst. Solids 5, 73 (1983)Google Scholar
[8] Crandall, R.S., Phys. Rev. B24, 7457 (1981)Google Scholar
[9] Carlson, D.E., J. Vac. Sci. Technol. 20, 290 (1982)Google Scholar
[10] Tsai, C.C., Stutzmann, M., Jackson, W.B., AIP Conference Proceedings No. 120, p. 242 (American Institute of Physics, New York, 1984)Google Scholar
[11] Holzenkimpfer, E., Richter, F.-W., Stuke, J., Voget-Grote, U., J. NonCryst. Solids 32, 327 (1979)CrossRefGoogle Scholar
[12] Knights, J.C., Street, R.A., Lucovsky, G., J. Non-Cryst. Solids 35,36, 279 (1980)CrossRefGoogle Scholar
[13] Crandall, R.S., Carlson, D.E., Catalano, A., Weakliem, H.A., Appl. Phys. Lett. 44, 200 (1984)CrossRefGoogle Scholar
[14] Nakamura, G., Sato, K., Yukimoto, Y., Solar Cells 9, 75 (1983)Google Scholar
[15] Stutzmann, M., Stuke, J., Sol. State Commun. 47, 635 (1983)CrossRefGoogle Scholar
[16] Tanielian, M.H., Goodman, N.B., Fritzsche, H., J. Physique 42, C4–375 (1981)Google Scholar
[17] Skumanich, A., Amer, N.M., Jackson, W.B., Phys. Rev. B31, 2263 (1985)Google Scholar
[18] Street, R.A., Phys. Rev. Lett. 49, 1487 (1982)Google Scholar
[19] Stutzmann, M., Street, R.A., to be publishedGoogle Scholar
[20] Stutzmann, M., Appl. Phys. Lett., in printGoogle Scholar
[21] Campbell, D.S., in Handbook of Thin Film Technology, edited by Maissel, L.I. and Glang, R. (McGraw-Hill, New York, 1970)Google Scholar
[22] Street, R.A., Thompson, M.J., Johnson, N.M., Phil. Mag. B51, 1 (1985)Google Scholar