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Light-Soaking Effects on Photoconductivity in a-Si:H Thin Films

Published online by Cambridge University Press:  15 February 2011

E. Morgado ,
M. Rebelo da Silva  and
R. T. Henriques
E. Morgado
Affiliation:
Centro de Física Molecular, Complexo I - IST, Technical University of Lisbon, Instituto Superior Técnico, Av. Rovisco Pais, 1000 Lisboa, Portugal
M. Rebelo da Silva
Affiliation:
Centro de Física Molecular, Complexo I - IST, Technical University of Lisbon, Instituto Superior Técnico, Av. Rovisco Pais, 1000 Lisboa, Portugal
R. T. Henriques
Affiliation:
Chemical Engineering Department, Technical University of Lisbon, Instituto Superior Técnico, Av. Rovisco Pais, 1000 Lisboa, Portugal
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Abstract

Metastable defects have been created by light exposure in thin films of a-Si:H. The samples have been characterized by Photothermal Deflection Spectroscopy, Electron Spin Resonance, dark- and photo-conductivity. The experimental results are consistent with numerical calculations with a recombination model involving band tails and one class of correlated dangling-bond states. The effects of light-soaking on the ligh intensity and defect density dependences of photoconductivity are reproduced by the calculations. The model allows to explain the experimental trends by changes in the electronic occupation of the gap states produced by light-induced defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 109
Copyright
Copyright © Materials Research Society 1997

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References

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