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Linear Polarization of Porous Si Photoluminescence

Published online by Cambridge University Press:  15 February 2011

N. A. Gippius ,
S. G. Tikhodeev ,
Al. L. Efros ,
M. Rosen ,
D. Kovalev ,
M. Ben Chorin ,
J. Diener  and
F. Koch
N. A. Gippius
Affiliation:
General Physics Institute, RAS, Vavilova Street 38, Moscow 117333, Russia, tikh@gpi.ru
S. G. Tikhodeev
Affiliation:
General Physics Institute, RAS, Vavilova Street 38, Moscow 117333, Russia, tikh@gpi.ru
Al. L. Efros
Affiliation:
Beam Theory Section, Naval Research Laboratory, Washington, DC 20375, USA
M. Rosen
Affiliation:
Beam Theory Section, Naval Research Laboratory, Washington, DC 20375, USA
D. Kovalev
Affiliation:
Technische Universität München, Physik-Department E16, D-85747 Garching, Germany
M. Ben Chorin
Affiliation:
Technische Universität München, Physik-Department E16, D-85747 Garching, Germany
J. Diener
Affiliation:
Technische Universität München, Physik-Department E16, D-85747 Garching, Germany
F. Koch
Affiliation:
Technische Universität München, Physik-Department E16, D-85747 Garching, Germany
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Abstract

We demonstrate experimentally that linear polarization of porous Si photoluminescence depends significantly on the excitation geometry and describe this effect within the framework of a dielectric model in which porous Si is considered as an aggregate of slightly deformed, elongated and flattened, dielectric elliptical Si nanocrystals with preferred orientation in the [100] direction. The theoretical best-fit analysis of the experimental data allows us to get certain information concerning the shapes and orientation of the ellipsoids.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 203
Copyright
Copyright © Materials Research Society 1996

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References

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