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Localized Vibrational Modes of Carbon-Hydrogen Complexes in MOCVD Grown GaN and AlGaN thin films

Published online by Cambridge University Press:  17 March 2011

J. Chen ,
Q. Zhou ,
Y. Berhane ,
M. O. Manasreh ,
C. A. Tran ,
M. Pophristic  and
I. T. Ferguson
J. Chen
Affiliation:
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131.
Q. Zhou
Affiliation:
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131.
Y. Berhane
Affiliation:
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131.
M. O. Manasreh
Affiliation:
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131. E-Mail:manasreh@eece.unm.edu
C. A. Tran
Affiliation:
EMCORE Corporation, 394 Elizabeth Ave, Somerset, NJ 08873
M. Pophristic
Affiliation:
EMCORE Corporation, 394 Elizabeth Ave, Somerset, NJ 08873
I. T. Ferguson
Affiliation:
EMCORE Corporation, 394 Elizabeth Ave, Somerset, NJ 08873
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Abstract

Localized vibrational modes of carbon-hydrogen complexes in metalorganic chemical vapor deposition grown GaN on sapphire were studied using a Fourier-transform infrared spectroscopy technique. Three distinctive localized vibrational modes were observed around 2850, 2922, and 2959 cm−1 for undoped, Si- and Mg-doped samples. These peaks are related to CH, CH2, and CH3 defect complexes, respectively. It is also observed that the frequencies and intensities of the localized vibrational modes are sample dependent.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G3.1
Copyright
Copyright © Materials Research Society 2001

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References

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