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Low Temperature Formation of Silicon Nitride Film: Combination of Catalytic-Nitridation and Catalytic-CVD

Published online by Cambridge University Press:  01 February 2011

A. Izumi ,
A. Kikkawa  and
H. Matsumura
A. Izumi
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology) Ishikawa 923-1292, JAPAN, a-izumi@jaist.ac.jp
A. Kikkawa
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology) Ishikawa 923-1292, JAPAN, a-izumi@jaist.ac.jp
H. Matsumura
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology) Ishikawa 923-1292, JAPAN, a-izumi@jaist.ac.jp
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Abstract

In this work silicon nitride films are formed as substrate temperatures 250°C by combination of catalytic-nitridation and catalytic-vapor deposition method in a catalytic chemical vapor deposition system. It is found that inserting nitridation layer about 2 nm-thick before growing the silicon nitride films, injection-type hysteresis of capacitance-voltage curve is drastically reduced from 1.4 V to 0.05 V for 40 nm-thick SiNx.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A10.3
Copyright
Copyright © Materials Research Society 2002

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References

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