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Low Temperature Growth of Oriented Gallium Nitride using Pulsed Laser Deposition

Published online by Cambridge University Press:  21 February 2011

Robert Leuchtner ,
W. Brock ,
Y. Li  and
L. Hristakos
Robert Leuchtner
Affiliation:
Department of Physics, University of New Hampshire, Durham, NH, 03824
W. Brock
Affiliation:
Department of Physics, University of New Hampshire, Durham, NH, 03824
Y. Li
Affiliation:
Department of Physics, University of New Hampshire, Durham, NH, 03824
L. Hristakos
Affiliation:
Department of Physics, University of New Hampshire, Durham, NH, 03824
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Abstract

Oriented GaN has been successfully grown at low substrate temperatures (∼480°C) on a- and r-planes of sapphire, using the pulsed laser deposition process. We have examined the effects of several deposition parameters on film growth, including substrate temperature (∼50–500°C), ambient pressure (1×10−3 – 10 torr of NH3), and target material (Ga or GaN). The film deposition rate was typically ∼3–4 μm/hr. Film characterization was performed using x-ray diffraction (XRD), optical microscopy, x-ray photoelectron spectrometry (XPS), and atomic force microscopy (AFM). In the case of the Ga metal target, a plasma (∼500V) between the target and substrate was necessary to promote formation of the GaN phase. The ammonia ambient enhanced the nitrogen content in the films compared to vacuum deposition. In general, the GaN target yielded better quality films (smaller rocking curve widths and smoother film morphology) compared to the Ga metal target. These results suggest that pulsed laser deposition is a promising approach to fabricating high quality films of this potentially important semiconducting material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 343
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1 see, e.g., Strite, S. and Morkoc, H., J. Vac. Sci. Technol. B 10, 1237 (1992), and the special issue on III-V nitrides in J. Elect. Mat. 24 (1995).Google Scholar
2 Cheung, J., Sankur, H., CRC Crit. Rev. Solid State Mater. Sci. 15, 63 (1988).Google Scholar
3 Pulsed Laser Deposition of Thin Films, Chrisey, D. and Hubler, G., eds., Wiley, NY, 1994.Google Scholar
4 Singh, R.K. and Narayan, J., Phys. Rev. B 41, 8843 (1990).Google Scholar
5 Helvajian, H. and Welle, R., Mat. Res. Soc. Symp. Proc. 129, 359 (1989).Google Scholar
6 Chrisey, a. D., Horwitz, J., Leuchtner, R.E., Thin Solid Films 206, 111 (1991); b. R.E. Leuchtner and K. Grabowski, Chap. 24, in ref. [3].Google Scholar
7 Leuchtner, R.E., Mat. Res. Soc. Symp. Proc. 354, 421 (1995).Google Scholar
8 Leuchtner, R., MRS Symp. B, "Advanced Laser Processing", Fall 1995.Google Scholar
9 van Ingen, R.P., J. Appl. Phys. 79, 467 (1996), and references therein.Google Scholar
10 Oriented film growth often occurs at temperatures lower than 0.33 Tm, where Tm is the melting temperature of the bulk material.Google Scholar
11 Handbook of Chemistry and Physics, CRC Press, Boca Raton, FL, 1994.Google Scholar
12 Sankur, H., Gunning, W.J., et al. , J. Appl. Phys. 65, 2475 (1989).Google Scholar
13 Johnson, W., Parsons, J.B., and Crew, M., J. Phys. Chem. 36, 2651 (1932).Google Scholar
14 Kennedy, T.A., Glaser, E.R. et al. , J. Elect. Mat. 24, 219 (1995).Google Scholar
15 Martin, G., Strite, S., Botchkarev, A., et al. J. Elect. Mat. 24, 225 (1995).Google Scholar