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Low Temperature growth of poly-crystalline film of Silicon-rich Silicon-Germanium by Reactive Thermal Chemical Vapor Deposition

Published online by Cambridge University Press:  17 March 2011

Kousaku Shimizu ,
Jianjun Zhang ,
Jeong-Woo Lee  and
Jun-Ichi Hanna
Kousaku Shimizu
Affiliation:
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
Jianjun Zhang
Affiliation:
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
Jeong-Woo Lee
Affiliation:
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
Jun-Ichi Hanna
Affiliation:
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Abstract

Low temperature growth of poly-SiGe has been investigated by reactive thermal chemical vapor deposition method, which is a newly developed technique for preparing poly-SiGe by using redox reactions in a set of source materials, i.e., Si2H6 and GeF4. In order to prepare silicon-rich poly-SiGe of high mobility, a series of experiment on total pressure, gas flow rates of the source materials and dilution gas of He, and residence time at 450°C has been investigated.

At 0.45 Torr, high crystallinity films with high silicon content were prepared, however, homogeneity of film thickness and reproducibility of the film growth was quite low for device application. For overcoming this problem, the growth condition has been studied especially in higher-pressure range of 5-15 Torr. Appropriate choice of the residence time and the gas flow ratios lead to significant improvement in the Si content in the films. Finally, more than 95% of silicon-rich poly-SiGe films, which is p-type, has 7.5 cm2/Vs of Hall mobility and (220) orientation, have been prepared at 10 Torr and 450°C within ±2% fluctuation of reproducibility which is enough to fabricate devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F14.13.1
Copyright
Copyright © Materials Research Society 2001

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References

[1] Steabler, D. L. and Wronski, C. R., Appl. Phys. Lett., 31, 292 (1977).Google Scholar
[2] Hamasaki, T., Kurata, H., Hirose, M., and Osaka, Y., Appl. Phys. Lett., 37, 1084 (1980).Google Scholar
[3] Matsumura, H., Jpn.J.Appl.Phys., 30, (1991) L1522.Google Scholar
[4] Nishida, S., Tasaki, H., Konagai, M., and Takahashi, K., J. Appl. Phys., 58, 1427 (1985).Google Scholar
[5] (a) Nagahara, T., Fujimoto, K., Kohno, N., Kashiwagi, Y., and Kakinoki, H.: Jpn. J. Appl. Phys. 31, 4555 (1992), (b) K. Endo, M. Bunyo, I. Shimizu, and J. Hanna: Mat. Res. Soc. Symp. Proc., 283, 641 (1993).Google Scholar
[6] Hanna, J., Proc. Mat. Res. Soc., 37, 105 (1995).Google Scholar
[7] Hanna, J., Shiota, K., and Yamamoto, M., Mat. Res. Soc. Proc., 507, 945 (1998).Google Scholar
[8] Hanna, J. and Shimizu, K. J. Organo. Chem. 611, 531 (2000).Google Scholar