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Low Temperature Growth of Silicon Dioxide Thin Films by UV Photo-oxidation

Published online by Cambridge University Press:  11 February 2011

Atsuyuki Fukano  and
Hiroyuki Oyanagi
Atsuyuki Fukano
Affiliation:
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, 1–1–1 Umezono, Tsukuba, Ibaraki 305–8568, Japan
Hiroyuki Oyanagi
Affiliation:
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, 1–1–1 Umezono, Tsukuba, Ibaraki 305–8568, Japan
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Abstract

The low-temperature growth of thin SiO2 layers for gate insulators in very large-scale integrated (VLSI) circuits is becoming an urgent topic of silicon technology. In contrast, to conventional thermal oxidization processes (T>900°C), ultraviolet (UV) photo-oxidation of silicon technology is a promising approach for low-temperature growth of silicon dioxide thin films. We have grown silicon dioxide thin films at low temperature (T<500 °C) using an excimer lamp with various wavelengths and evaluated the quality of thin SiO2 layers as well as the SiO2–Si interface. We found that the SiO2 layers (t<5 nm) grown by UV photo-oxidation show significant differences in physical properties, such as density profile, from those of thermal oxidization, i.e., the higher average density 2.23 g/cm3 and more constant distribution, making the SiO2–Si interface region, so-called “transition layer” less eminent. Superior characteristics of ultra-thin SiO2 layer grown by UV photo-oxidation are demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 751: Symposium Z – Structure-Property Relationships of Oxide Surfaces and Interfaces II , 2002 , Z3.19
Copyright
Copyright © Materials Research Society 2003

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