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Low Temperature Phase Transition (Pt) and Defect Formation (Df) in Silicon with Dioxide Inclusions Under X-Ray Irradiation

Published online by Cambridge University Press:  21 February 2011

SH.M. Makhkamov  and
S.N. Abdurakhmanova
SH.M. Makhkamov
Affiliation:
Institute of Nuclear Physics, Uzbekistan Academy of Sciences, Tashkent 702132, Uzbekistan
S.N. Abdurakhmanova
Affiliation:
Institute of Nuclear Physics, Uzbekistan Academy of Sciences, Tashkent 702132, Uzbekistan
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Abstract

Studies of galvanomagnetic and electrical parameters of p- type Si : SiO2 in the temperature range 80 – 400 K have shown that X-ray irradiation at 80 K (Mo Ka,β and braking radiation hvmax. = 50 heV) leads to various transformations of the spectrum of electron- hole states in the band gap of such material, depending on the flux density of the X-rays. Two main processes are observed: the defect (vacancy and divacancy) formation and a charge exchange of native defects localized at the Si – SiO2 interface. The charge exchange process is rather collective and stimulated one because it is in response to an X-ray-induced ferroelectric phase transition in the SiO2- phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 775
Copyright
Copyright © Materials Research Society 1996

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