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A Low Temperature Polycrystalline Si TFT Technology for Large area AMLCD Drivers

Published online by Cambridge University Press:  10 February 2011

Krishna C. Saraswat ,
V. Subramanian  and
S. Jurichich
Krishna C. Saraswat
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305.
V. Subramanian
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305.
S. Jurichich
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305.
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Abstract

In this paper we describe a low thermal budget technology to fabricate high performance CMOS thin-film transistors (TFTs) in polycrystalline silicon and silicon/germanium on low cost glass substrates, for active-matrix liquid crystal display (AMLCD) applications. Based on modeling of delay times of the scan and data lines driven by n-channel TFTs we show that for AMLCDs with integrated drive circuits, mobility in excess of 40 cm2/V. sec will be required. Through proper optimization of amorphous film deposition, crystallization (nucleation and grain growth), fabrication process parameters and device structure we have obtained mobility in excess of 50 cm2/V. sec in Si TFTs, using conventional manufacturing technology compatible with glass substrates. Economic modeling suggests that low-temperature poly-TFT LCDs with integrated drivers will have a competitive manufacturing cost to LCDs of an equivalent size and resolution with α-Si pixel TFTs and single crystal drivers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 472: Symposium I – Polycrystalline Thin Films - Structure, Texture, Properties..III , 1997 , 439
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Tomita, S., Jurichich, S., and Saraswat, K. C., SID 16th Int. Didplay Res. Conf., Birmingham, U.K., Oct. 1–3, 1996.Google Scholar
[2] for example, W.E.4, Journal of the SID, 3/3, pp. 127–132, 1995 Google Scholar
[3] Yamauchi, N., Reif, R., J. Appl Phys., Vol. 75, no. 7, p. 3235, 1994.Google Scholar
[4] Zellama, K., Germain, P., Squelard, S., Bourgoin, J. C, and Thomas, P. A., J. Appl. Phys., Vol. 50, no. 11, p. 6995, 1979.Google Scholar
[5] Fair, J., Mehlhaff, J., Fulks, R. and Wu, I-W., Intl. Flat Panel Display Conference, SEMICON/WEST, p. A109, 1992.Google Scholar
[6] Subramanian, V., Dankoski, P., Degertekin, F. L., Khuri-Yakub, B. T. and Saraswat, K. C., IEEE Electron Dev. Lett., (Submitted).Google Scholar
[7] Nam, K-S., Song, Y-H., Baek, J-T., Kong, H-J., and Lee, S-S., Jap. J. Appl. Phys., vol. 32, no, 5A, p. 1908, 1993.Google Scholar
[8] Degertekin, F. L‥, Pei, J., Khuri-Yakub, B. T., and Saraswat, K. C., Appl. Phys. Lett., Vol. 64, no. 11, p. 1338, 1994.Google Scholar
[9] Subramanian, V., Degertekin, F. L., Dankoski, P., Khuri-Yakub, B. T., Saraswat, K. C., MRS Symp. on Flat Panel DisplayMaterials II, May 1996, San Francisco, vol. 424, pp. 267–272.Google Scholar
[10] Subramanian, V., Degertekin, F. L., Dankoski, P., Khuri-Yakub, B. T. and Saraswat, K. C., J. Electrochem. Soc. (Submitted).Google Scholar
[11] Saraswat, K. C., Apte, P. P., Booth, L., Chen, Y., Dankoski, P., Degertekin, F. L., Franklin, G. F., Khuri-Yakub, B. T., Moslehi, M. M., Schaper, C., Gyugi, P. J., Lee, Y. J., Pei, J., Wood, S. C., IEEE Trans. Semiconductor Manufacturing, Vol. 7, no. 2, p. 159, 1994.Google Scholar
[12] Lee, S.-W. and Joo, S.-K., IEEE Electron Device Letters, Vol. 17, no. 4,. 160–2, 1996.Google Scholar
[13] Subramanian, V. and Saraswat, K. C., IEEE Device Research conf., Boulder, Colorado, June 1997.Google Scholar
[14] Subramanian, V. and Saraswat, K. C., VLSI Technology Symp., Kyoto, June 1997.Google Scholar