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Low Temperature UV Growth of SiO2 in O2 and N2O
Published online by Cambridge University Press: 25 February 2011
Abstract
We report here the use of a low pressure Hg lamp to grow oxide layers on Si in N 2O and O2. Layer thicknesses up to 100Å, whose IR absorption characteristics are similar to those exhibited by thermal oxides, have been produced. Preliminary modelling of the process is described.
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- Copyright © Materials Research Society 1992