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Low Temperature UV Photodeposition of Aluminum from TMA: Characterization and Control of Deposit Composition

Published online by Cambridge University Press:  26 February 2011

T.E. Orlowski  and
D.A. Mantell
T.E. Orlowski
Affiliation:
Xerox Webster Research Center, 800 Phillips Road. Webster, NY 14580
D.A. Mantell
Affiliation:
Xerox Webster Research Center, 800 Phillips Road. Webster, NY 14580
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Abstract

Laser processing conditions have been discovered which provide high-quality aluminum deposits from the photodecomposition of TMA (trimethylaluminum). Using an ArF excimer laser, AI can be deposited on Si and glass in well defined patterns at high rates (600 A/min) at low TMA pressure (≤ 30 mtorr) if substrate temperature is kept low (≤ 25C). Deposit composition is characterized by x-ray photoelectron spectroscopy (XPS) which shows that deposit carbon content depends upon laser pulse intensity varying nearly quadratically from < 1% at 8 mJ/cm2 to nearly 25% at 80 mJ/cm2. Mass spectroscopie analysis during laser processing identifies methane, ethylene and ethane as primary hydrocarbon photoproducts. Thermal desorption measurements indicate that many adlayers of adsorbed TMA leave the sample surface with only slight heating (35C) providing an explanation for observing higher growth rates at room temperature. Because of the high deposition rate and deposit quality observed, this low temperature process provides an attractive processing alternative for interconnect repair on Si and glass.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 165
Copyright
Copyright © Materials Research Society 1998

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References

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