Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-09T03:49:29.783Z Has data issue: false hasContentIssue false
  • English
  • Français

A Low Temperature Vaporization of Pb(THD)2 with NH3

Published online by Cambridge University Press:  15 February 2011

June Key Lee ,
Wan In Lee  and
Seshu B. Desu
June Key Lee
Affiliation:
Materials & Devices Research Center, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Kyungki 440–600, Korea
Wan In Lee
Affiliation:
Materials & Devices Research Center, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Kyungki 440–600, Korea
Seshu B. Desu
Affiliation:
Department of Material Science and Engineering, Virginia Tech., Blacksburg, VA 24061
Get access

Abstract

Pb(THD)2 is one of the most popular CVD precursors for lead. It was found in this study that the volatility of Pb(THD)2 can be considerably improved by using ammonia as a carrier gas. An adduct between Pb(THD)2 and NH3 is generated in-situ, when the NH3 carrier gas is passed through the bubbler containing Pb(THD)2. The ammoniated precursor was isolated and its molecular structure was characterized by elemental analysis, infrared and NM.R. PbO thin films could be prepared with this precursor system while maintaining the bubbler temperature at 110° C, which is considerably lower than the temperature used with the Pb(THD)2 precursor in the commonly used carrier gas.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 349
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Scott, J.F. and Paz de Araujo, C.A., Science, 246, 1400 (1989).Google Scholar
2. Moazzami, R., Maniar, P.D., Jones, R.E., Campbell, A.C. and Mogb, C.J., 1993 Symposium on VLSI Technology (1993).Google Scholar
3. Shimizu, M., Fusimoto, M., Katayama, T., Shiosalci, T. et al., Mat. Res. Soc. Symp., 310, 255 (1993).Google Scholar
4. Peng, Chien H. and Desu, Sehsu B., 4th ISIF Proc, 460 (1992).Google Scholar
5. Mehrotra, R.C., Bohra, R. and Gaur, D.P., Metal β-Diketonates andAlliedDerivatives, Academic Press, Lodon (1978).Google Scholar
6. Nakai, T., Tabuchi, T., Sawado, Y., Kobayashi, I. and Sugimori, Y., Jpn. J. Appl. Phy 31, 2992 (1992).Google Scholar
7. Hendricks, W.C., M.S. Thesis, Virginia Tech., Blacksburg, VA (1993).Google Scholar