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Low-Temperature Growth and Characterization of InP Grown by Gas-Source Molecular-Beam Epitaxy

Published online by Cambridge University Press:  15 February 2011

B. W. Liang ,
Y. He  and
C. W. Tu
B. W. Liang
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407
Y. He
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407
C. W. Tu
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407
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Abstract

Low-temperature (LT) growth of InP by gas-source molecular-beam epitaxy has been studied. Contrary to GaAs, InP grown at low temperature (from 200°C to 410°C) shows ntype, low-resistivity properties. The electron concentration changes dramatically with growth temperature. A model of P antisite defects formed during LT growth was used to explain this experimental result. Ex-situ annealing can increase the resistivity, but only by a factor of about 6. Heavily Be-doped LT InP also shows n-type property. We believe this is the first report of an extremely high concentration of donors formed in LT InP and n-type doping by Be in III–V compounds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 283
Copyright
Copyright © Materials Research Society 1992

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References

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