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Low-Temperature PECVD SiO2 On Si And SiC
Published online by Cambridge University Press: 10 February 2011
Abstract
The deposition of SiO2 films by plasma-enhanced-chemical-vapor-deposition (PECVD) using tetraethylorthosilicate (TEOS) was studied. MOS capacitors were fabricated on both Si and SiC for this study. Several different sets of experiments were conducted for PECVD deposition according to different growth parameters and the results compared. For Si samples with SiO2 deposited at a substrate temperature 300°C, the C∼V curve gave a flat-band voltage of 1V and a transition slope of 112 pF/V. The dielectric constant of the deposited SiO2 film was 4.2 and the Si/SiO2 interface trap density was calculated to be 1.8×1010 cm−2. The I-V curve showed a leakage current density of l.2×10−9 A/cm2 and dielectric breakdown field strength of 9.2 MV/cm. For SiC samples, the PECVD deposition gave a uniform SiO2 film with a controllable deposition rate of 0.3nm/sec. The refractive index and dielectric constant of the as-deposited SiO2 film were 1.46 and 3.84 respectively. The I∼V curve showed a leakage current density of 2×10−9 A/cm2 and a breakdown field of 4.7 MV/cm.
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- Copyright © Materials Research Society 1998
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