Hostname: page-component-5c6d5d7d68-qks25 Total loading time: 0 Render date: 2024-08-27T23:18:12.516Z Has data issue: false hasContentIssue false

Low-temperature Photoluminescence Studies of CdTe Thin Films Deposited on CdS/ZnO/Glass Substrates

Published online by Cambridge University Press:  21 August 2013

Corneliu Rotaru
Affiliation:
Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., MD-2009 Chisinau, Republic of Moldova
Sergiu Vatavu
Affiliation:
Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., MD-2009 Chisinau, Republic of Moldova Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie, Lise-Meitner-Campus, Hahn-Meitner-Platz 1, 14109 Berlin, Germany Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33647, USA
Christoph Merschjann
Affiliation:
Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie, Lise-Meitner-Campus, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
Chris Ferekides
Affiliation:
Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33647, USA
Vladimir Fedorov
Affiliation:
Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., MD-2009 Chisinau, Republic of Moldova
Tobias Tyborski
Affiliation:
Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie, Lise-Meitner-Campus, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
Mihail Caraman
Affiliation:
Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., MD-2009 Chisinau, Republic of Moldova
Petru Gaşin
Affiliation:
Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., MD-2009 Chisinau, Republic of Moldova
Martha Ch. Lux-Steiner
Affiliation:
Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie, Lise-Meitner-Campus, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
Marin Rusu
Affiliation:
Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., MD-2009 Chisinau, Republic of Moldova Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie, Lise-Meitner-Campus, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
Get access

Abstract

The CdTe photoluminescence spectra of CdTe/CdS/ZnO heterojunctions annealed in the presence of CdCl2 have been analyzed in the 4.7-100K temperature range. The analysis has been performed for laser excitation power between 0.01 mW and 30 mW. The analysis showed that the photoluminescence spectrum in the 1.1-1.6 eV region consists of a defect band (1.437 eV) having complex structure and revealing well contoured LO phonon replicas and bound exciton annihilation in the 1.587-1.593 eV region. The band analysis has been carried out by deconvoluting the spectra. It has been shown that the defect band consists of two elementary bands and their phonon replica. An “unusual” temperature dependence of the defect band has been found.

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Vatavu, S., Zhao, H., Padma, V., Rudaraju, R., Morel, D.L., Gaşin, P., Caraman, Iu. and Ferekides, C.S., Thin Solid Films, 515, 6107 (2007).CrossRefGoogle Scholar
Vatavu, S., Rotaru, C., Fedorov, V., Stein, T. A., Caraman, M., Evtodiev, Ig., Kelch, C., Kirsch, M., Chetruş, P., Gaşin, P., Lux-Steiner, M. Ch. and Rusu, M., Thin Solid Films, http://dx.doi.org/10.1016/j.tsf.2012.11.105 (2013).Google Scholar
Onodera, C., Taguchi, T., J. Cryst. Growth, 101, 502 (1990).CrossRefGoogle Scholar
Physics and Chemistry of II-VI compounds, edited by Aven, M. and Prener, J.S. (North Holland Publishing Company, Amsterdam, 1967). Physics and Chemistry of AIIBVI compounds, S.A. Medevedev (Ed.), MIR, Moskow, 1970.Google Scholar
Prochazka, J., Hlidek, P., Franc, J., Grill, R., Belas, E., Bugar, M., Babentsov, V. and James, R. B., J. Appl. Phys., 110, 093103 (2011).CrossRefGoogle Scholar
Krustok, J., Madasson, J., Hjelt, K., Collan, H., J. Mater. Sci. Lett., 14, 1490 (1995).CrossRefGoogle Scholar
Cotal, H.L., Lewandowski, A.C., Markey, B.G., McKeever, S.W.S., Cantwell, E., Aldridge, J., J. Appl. Phys., 67(2), 975 (1990).CrossRefGoogle Scholar
Aguilar-Hernandez, J., Contreras-Puente, G., Flores-Llamas, H., Yee-Madeira, H. and Zelaya-Angel, O., J. Phys. D: Appl. Phys., 28, 1517 (1995).CrossRefGoogle Scholar
Biernacki, S., Scherz, U., Meyer, B.K., Phys. Rev. B, 48, 11726 (1993).CrossRefGoogle Scholar
Mathew, X., Arizmendi, J.R., Campos, J., Sebastian, P.J., Mathews, N.R., Jimenez, C.R., Jimenez, M.G., Silva-Gonzalez, R., Hernandez-Torres, M.E., Dhere, R., Sol. Energy Mater. & Solar Cells, 70, 379 (2001).CrossRefGoogle Scholar
Giles, N. C., Bicknell, R. N., and Schetzina, J. F., J. Vac. Sci. Technol., A 5, 3064 (1987).CrossRefGoogle Scholar
Hiesinger, P., Suga, S., Willmann, F., Dreybrod, W., Phys. Stat. Sol.(b), 67 641 (1975).CrossRefGoogle Scholar
Shin, H.-Y., Sun, C.-Y., J. Cryst. Growth, Sun, J. Cryst. Growth, 186, 354 (1998).Google Scholar
Vatavu, S., Zhao, H., Caraman, Iu., Gasin, P., Ferekides, C., Thin Solid Films, 517, 2195 (2009).CrossRefGoogle Scholar
Feng, Z.C., Bevan, M.J., Krishnaswamy, S.V., Choyke, W.J., J. Appl. Phys., 64, 2595 (1988).CrossRefGoogle Scholar
Panosyan, Zh.R. in Radiative Recombination in Semiconductor Crystals, (D. V. Skobeltsyn, Proceedings of the P.N. Lebedev Physics Institute, Consultant Bureau, New York, 1975), Vol. 68, p. 145.CrossRefGoogle Scholar