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Low-Temperature Processing Using Triple Alkoxide Precursors for Layer-Structured Perovskite Thin Films: Preparation and Characterization of Mbi2Ta2O9 (M: Ca or Ba) Thin Films

Published online by Cambridge University Press:  10 February 2011

K. Kato
K. Kato*
Affiliation:
National Industrial Research Institute of Nagoya, 1 Hirate-cho, Kita-ku, Nagoya 462–8510, Japan, kzmkato@nirin.go.jp Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuda-cho, Midori-ku, Yokohama 226–8503, Japan
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Abstract

CaBi2Ta2O9 and BaBi2Ta2O9 thin films were successfully prepared by using triple alkoxide precursors such as Ca[BiTa(OC2H5)9]2 and Ba[BiTa(OC2H5)9]2, respectively. As-deposited films were amorphous and crystallized below 500°C by rapid thermal annealing in oxygen. The crystallinity improved with annealing temperature. The development of the crystal structure and surface topography of the thin films were investigated. Additionally, some electrical properties were evaluated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 167
Copyright
Copyright © Materials Research Society 2000

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