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LPCVD Deposition Techniques for Nanograin sub-10nm Polysilicon Ultra-thin Films

Published online by Cambridge University Press:  15 March 2011

Serge Ecoffey ,
Didier Bouvet ,
Adrian M. Ionescu  and
Pierre Fazan
Serge Ecoffey
Affiliation:
Swiss Federal Institute of Technology, Electronic Laboratories, CH-1015 Lausanne, Switzerland
Didier Bouvet
Affiliation:
Swiss Federal Institute of Technology, Electronic Laboratories, CH-1015 Lausanne, Switzerland
Adrian M. Ionescu
Affiliation:
Swiss Federal Institute of Technology, Electronic Laboratories, CH-1015 Lausanne, Switzerland
Pierre Fazan
Affiliation:
Swiss Federal Institute of Technology, Electronic Laboratories, CH-1015 Lausanne, Switzerland
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Abstract

This paper investigates the limits of a low pressure chemical vapour deposition (LPCVD) technique for the deposition of a nanometre scale ultra-thin polysilicon (poly-Si) film with sub-10nm grain sizes. Three different processes using pure silane (SiH4) in a standard horizontal hot-wall reactor are presented: (i) a direct poly-Si deposition, (ii) a Hemispherical Silicon Grain (HSG) deposition and (iii) an amorphous silicon (a-Si) deposition followed by a thermal crystallization anneal. The direct poly-Si deposition gives a minimum film thickness achievable around 20 nm with grain sizes ranging from 20 to 30 nm. The HSG deposition process leads to the formation of grains with diameters varying from 5 to 50 nm and heights ranging from 5 to 20 nm. The best results are obtained with the third process (a-Si / crystallization), which allows the formation of 6 nm poly-Si thick films with grain sizes ranging from 10 to 20 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 686: Symposium A – Materials Issues in Novel Si-Based Technology , 2001 , A6.4
Copyright
Copyright © Materials Research Society 2002

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