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Luminescence Properties of Yb-Doped Inp

Published online by Cambridge University Press:  21 February 2011

H. J. Lozykowski ,
A. K. Alshawa ,
G. Pomrenke  and
I. Brown
H. J. Lozykowski
Affiliation:
Ohio University, Athens, Ohio
A. K. Alshawa
Affiliation:
Ohio University, Athens, Ohio
G. Pomrenke
Affiliation:
AFOSR/NE Bolling AFB, Washington, D.C
I. Brown
Affiliation:
Lawrence Berkeley Laboratory, University of California at Berkeley
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Abstract

The photoluminescence, time resolved spectra and kinetics of Yb implanted InP samples are studied under pulsed and CW excitations (above and below band-gap) at different temperatures and excitation intensity. The photoluminescence intensity and decay time as a function of temperature is explained by a proposed new quenching mechanism involving Fe ion. The rise and decay times depend on excitation intensity. The above experimental facts was explained using the kinetics model developed by H.J. Lozykowski [2]. The numerically simulated luminescence rise and decay times show a good quantitative agreement with experiment, over a wide range of generation rates. The electric field InP:Yb photoluminescence quenching was investigated and reported for the first time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 263
Copyright
Copyright © Materials Research Society 1993

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References

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