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Magnetic Properties and Crystal Structure of High Moment FeTaN Thin Films

Published online by Cambridge University Press:  03 September 2012

G. Qiu ,
E. Haftek ,
J. C. Cates ,
C. Alexander Jr  and
J. A. Barnard
G. Qiu
Affiliation:
The University of AlabamaDepartment of metallurgical and Materials Engineering Tuscaloosa, AL 35487–0202
E. Haftek
Affiliation:
The University of AlabamaDepartment of metallurgical and Materials Engineering Tuscaloosa, AL 35487–0202
J. C. Cates
Affiliation:
The University of AlabamaDepartment of Physics and Astronomy, Tuscaloosa, AL 35487–0202
C. Alexander Jr
Affiliation:
The University of AlabamaDepartment of metallurgical and Materials Engineering Tuscaloosa, AL 35487–0202
J. A. Barnard
Affiliation:
The University of AlabamaDepartment of metallurgical and Materials Engineering Tuscaloosa, AL 35487–0202
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Abstract

High Moment single layer FeTaN films with excellent soft magnetic properties have been grown by high rate reactive dc magnetron sputtering. The best combination of properties (easy and hard axis coercivities < 1 Oe, saturation Magnetization > 1650 emu/cc, anisotropy field of 5 Oe, and initial permeability of 4800) are found in films containing ∼3.2 a/O Ta and ∼7.5 a/o N after 400°C annealing in a 200 Oe dc field for two hours. These properties are associated with a single phase, random, nanocrystalline structure consisting of a-Fe crystallites (grain size of ∼ 100Å) whose lattice is expanded by both Ta and N.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 313: Symposium Q1 – Magnetic Ultrathin Films, Multilayers and Surfaces/Magnetic Interfaces-Physics and Characterizations , 1993 , 339
Copyright
Copyright © Materials Research Society 1993

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References

[1] Russak, M.A., Jannes, C.V., Klokholm, E., Lee, J-W., Re, M.E., and Webb, B.C., J. Magn. and Mag. Mater. 104–107, 1851 (1992).Google Scholar
[2] Watanabe, Y., Oura, H. and Onozato, N., IEEE Trans. Magn. Mag-26, 1500 (1990).Google Scholar
[3] Ishiwata, N., Wakabayashi, C., and Urai, H., J. Appl. Phys. 69, 5616 (1991).Google Scholar
[4] Qiu, G., Haftek, E., and Barnard, J.A., J. Appl. Phys., in pressGoogle Scholar
[5] Terada, N., Hoshi, Y., Naoe, N., and Yamanaka, S., IEEE Trans. Magn. Mag- 20, 1451 (1984).Google Scholar
[6] Nagai, Y., Tago, A., Yanagisawa, K., and Toshima, T., J. Appl. Phys. 61, 3841 (1987).Google Scholar
[7] Wang, S., and Kryder, M.H., J. Appl. Phys. 67, 5134 (1990).Google Scholar
[8] Chopra, K. L., Thin Film Phenomenon. (Robert E. Krieger Publishing Company, Inc., Malabar, Florida, 1985), p. 672.Google Scholar
[9] Cates, J.C., Alexander, C.A. Jr., Haftek, E., and Barnard, J.A., submitted IEEE Trans. Mag.Google Scholar
[10] Cates, J.C., Qiu, G., Haftek, E., Alexander, C.A. Jr., and Barnard, J.A., this proceedings.Google Scholar
[11] Flinn, P.A. and Waychunas, G.A., J. Vac. Sci. Technol. B 6, 1749 (1988).Google Scholar
[12] Shimatsu, T., Shoji, H., Kyyoho, M., Takahashi, Migaku and Wakiyama, T., J. Magn. Soc. Jpn. 15, 63 (1991).Google Scholar