We report on our efforts to selectively place chemical beam epitaxy grown Stranski-Krastanov InAs dots on GaAs patterns. The pattern profiles for placement depends on the growth conditions of a GaAs buffer layer grown on the lithographic patterns. Because we seek to suppress dot formation on (100)-oriented surfaces outside of the features, we investigated the effects buffer layer growth conditions have on dot nucleation using reflected high energy electron diffraction, atomic force microscopy and photo-luminescence. We conclude that buffer conditions favorable for patterns have negligible effect on the dots formed on the (100)- oriented surface, and that selective dot placement can be engineered by As pressure, InAs deposition and buffer growth conditions.