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Maskless Patterning of Cr Films Using Focused Ion Beams

Published online by Cambridge University Press:  25 February 2011

K. Gamo ,
K. Moriizumi ,
T. Matsui  and
S. Namba
K. Gamo
Affiliation:
Faculity of Engineering Science, Osaka University, Toyonaka, Osaka, Japan
K. Moriizumi
Affiliation:
Faculity of Engineering Science, Osaka University, Toyonaka, Osaka, Japan
T. Matsui
Affiliation:
Faculity of Engineering Science, Osaka University, Toyonaka, Osaka, Japan
S. Namba
Affiliation:
Faculity of Engineering Science, Osaka University, Toyonaka, Osaka, Japan
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Abstract

Characteristics of maskless patterning of Cr films using focused Sb+ ion implantation have been investigated. Dose and depth dependence of the etching rate of Sb-implanted layers during plasma etching using CCl4 were measured. Sb profiles were also measured by Rutherford backscattering techniques. It was found that a sharp threshold dose exists to form an etch-resistant layer by Sb implantation. It was also found that a latent image of an Sb implanted pattern at a dose ≥3.8×1015/cm2 was developed by the plasma etching, and that Cr patterns with a thickness of a few hundred nanometers were formed by the present maskless patterning technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 531
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Wolf, G. K., Treatise on Materials Science and Technology Vol. 18 ed. Hirvonen, J. K. (Academic Press, New York, 1980) pp. 373–414 Google Scholar
2. Gibbons, J. F., Hechfl, F. O. and Tsurushima, T., Appl. Phys. Lett. 15, 117 (1969)Google Scholar
3. Moriwaki, K., Masuda, K., Aritome, H. and Namba, S., Jpn. J. Appl. Phys. 19 , 491 (1980)Google Scholar
4. Tsurushima, T., Tanoue, H. and Funabashi, H., Inst. Electron. Commu. Eng. 527 (1976)Google Scholar
5. Kawabe, M., Kubota, M., Masuda, K. and Namba, S., J. Vac. Sci. Technol. 15, 1096 (1978).Google Scholar
6. Yamazaki, T., Suzuki, Y. and Nakata, N.: J. Vac. Sci. Technol. 17, 1348 (1980)Google Scholar
7. Pankove, J. I. and Wu, C. P., Proc. IEDM 1980 (Dec. 8–10, Wahington D. C.)Google Scholar
8. Ehrlich, D. J., Osgood, R. M. Jr and Deutsch, T. E., Appl. Phys. Lett. 38, 399 (1981)Google Scholar
9. Gamo, K., Ukegawa, T., Inomoto, Y., Ochiai, Y. and Namba, S., J. Vac. Sci. Technol. 19, 1182 (1981)Google Scholar
10. Gamo, K., Inomoto, Y., Ochiai, Y. and Namba, S., Jpn. J. Appl. Phys. 21 Suppl. 21–1, pp. 415 (1981)Google Scholar
11. Chu, W. K., Mayer, J. W. and Nicolet, M-A, Backscattering spectroscopy (Academic Press, New York, 1978)Google Scholar
12. Winterbon, K. B., Ion Implantation Range and Energy Deposition Distributions Vol. 2 (IFI/Plenum, New York, 1957)Google Scholar