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Materials and Device Characteristics of Pseudomorphic AlGaAs-InGaAs-GaAs and AlInAs-InGaAs-InP High Electron Mobility Transistors

Published online by Cambridge University Press:  28 February 2011

J.M. Ballingall ,
Pin Ho ,
G J. Tessmer ,
P.A. Martin ,
T.H. Yu ,
P.C. Chao ,
P.M. Smith  and
K.H.G. Duh
J.M. Ballingall
Affiliation:
THE GE COMPANY ELECTRONICS LABORATORY SYRACUSE, NY 13221 (INVITED).
Pin Ho
Affiliation:
THE GE COMPANY ELECTRONICS LABORATORY SYRACUSE, NY 13221 (INVITED).
G J. Tessmer
Affiliation:
THE GE COMPANY ELECTRONICS LABORATORY SYRACUSE, NY 13221 (INVITED).
P.A. Martin
Affiliation:
THE GE COMPANY ELECTRONICS LABORATORY SYRACUSE, NY 13221 (INVITED).
T.H. Yu
Affiliation:
THE GE COMPANY ELECTRONICS LABORATORY SYRACUSE, NY 13221 (INVITED).
P.C. Chao
Affiliation:
THE GE COMPANY ELECTRONICS LABORATORY SYRACUSE, NY 13221 (INVITED).
P.M. Smith
Affiliation:
THE GE COMPANY ELECTRONICS LABORATORY SYRACUSE, NY 13221 (INVITED).
K.H.G. Duh
Affiliation:
THE GE COMPANY ELECTRONICS LABORATORY SYRACUSE, NY 13221 (INVITED).
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Abstract

High electron mobility transistors (HEMTs) with single quantum well active layers composed of pseudomorphic IπGaAs grown on GaAs and InP are establishing new standards of performance for microwave and millimeter wave applications. This is due to recent progress in the molecular beam epitaxial growth of strained InGaAs heterostructures coupled with developments in short gate length (sub%0.2 µm) device fabrication technology. This paper reviews this progress and the current state-of-the-art for materials and devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 759
Copyright
Copyright © Materials Research Society 1990

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