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Materials and Processes At the Leading Edge of Photolithography

Published online by Cambridge University Press:  21 February 2011

Gary N. Taylor
Gary N. Taylor*
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
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Abstract

The evolution of optical lithography to higher resolution patterning with step-and-repeat exposure methods has resulted from the precise fabrication of higher numerical aperture lenses, more precisely engineered and controlled mechanical and electrical subsystems, and new lenses, systems components and light sources which enable efficient printing at shorter wavelengths. Optical resist technology is undergoing a parallel evolution which is sharpening this capability even further. This paper outlines resist materials and processes at the leading edge of photolithography which will enable printing near and perhaps at the theoretical resolution limits. Subtopics discussed include resists sensitive to 248.4 nm excimer laser radiation, planarization methods, multilevel resist materials, and surface-functionalized plasma-developed resists. Finally, some conjecture about the practical resolution limits of optical lithography is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 108 , 1987 , 257
Copyright
Copyright © Materials Research Society 1988

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