No CrossRef data available.
Article contents
Materials Aspects of GaAs on Si
Published online by Cambridge University Press: 28 February 2011
Summary abstract
Despite the 4.2% lattice mismatch, several laboratories have demonstrated that the quality of GaAs grown on Si is high enough for practical device applications [1–5]. At the GaAs/Si interface, a dislocation density of roughly 1012cm−2 is required to accommodate the mismatch. Therefore various techniques of dislocation filtering are necessary to provide material with acceptable dislocation counts. Among these techniques are the use of tilted substrates, strained layer superlattices, and intermediate layers.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1987
References
1.
Fischer, R., Chand, N., Kopp, W., Peng, C. K., Morkoc, H., Gleason, K. R. and Scheitlin, D., “A dc and Microwave Comparison of GaAs MESFETs Grown on GaAs and Si Substrates,”
IEEE Trans. Electron Dev., vol. ED–33, pp. 206–213, 1986.Google Scholar
2.
Metze, G. M., Choi, H. K. and Tsaur, B.-Y., “Metal Semiconductor Field Effect Transistors Fabricated in GaAs Layers Grown Directly on Si Substrates by Molecular Beam Epitaxy,”
Appl. Phys. Lett., vol. 45, pp. 1107–1109, 1984.Google Scholar
3.
Wright, S. L., Inada, M. and Kroemer, H., “Polar on Nonpolar Epitaxy: Sublattice Ordering in the Nucleation and Growth of GaP on Si (211) Surfaces,” J. Vac. Sci. Technol., vol. 21, pp. 534–539, 1982.Google Scholar
4.
Fischer, R., Chand, N., Kopp, W., Morkoc, H., Erickson, L. P. and Youngman, R., “GaAs Bipolar Transistors Grown on (100) Si Substrates by Molecular Beam Epitaxy,”
Appl. Phys. Lett., vol. 47, pp. 397–399, 1985.Google Scholar
5.
Chand, N., People, R., Baiocchi, F.A., Wecht, K.W. and Cho, A.Y., “Significant Improvement in Crystalline Quality of MBE Grown GaAs on Si (100) by Rapid Thermal Annealing,”
Appl. Phys. Lett., vol. 49, pp. 815–817, 1986.Google Scholar