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Materials selection for SrTiO3-based epitaxial oxide field-effect devices

Published online by Cambridge University Press:  11 February 2011

K. Shibuya ,
T. Ohnishi ,
M. Kawasaki ,
H. Koinuma  and
M. Lippmaa
K. Shibuya
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8502, Japan
T. Ohnishi
Affiliation:
Institute for Solid State Physics, University of Tokyo, 5–1–5 Kashiwanoha, Kashiwa 277–8581, Japan
M. Kawasaki
Affiliation:
Institute for Materials Research, Tohoku University, 2–1–1 Katahira, Aoba-ku, Sendai 980–8577, Japan
H. Koinuma
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, Japan
M. Lippmaa
Affiliation:
Institute for Solid State Physics, University of Tokyo, 5–1–5 Kashiwanoha, Kashiwa 277–8581, Japan
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Abstract

We have studied the growth of four wide gap insulator materials, CaHfO3, CaZrO3, NdGaO3, and LaGaO3 on SrTiO3. CaHfO3 was selected as the best material for forming the insulator layer of an all-oxide field-effect device because the films had the best crystallinity on SrTiO3 (100) and the highest breakdown field. (La,Sr)TiO3 was selected as a metallic oxide for fabricating the source and drain electrodes. Metallic layers were obtained by depositing ultrathin amorphous LaTiO3 films at room temperature on SrTiO3 and postannealing at high temperature to promote Sr diffusion from the substrate into the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 747: Symposia T/V – Crystalline Oxides on Semiconductors – Interfacial Issues for Oxide-Based Electronics , 2002 , V3.2
Copyright
Copyright © Materials Research Society 2003

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References

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