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MBE Growth and Characterization of InSb/AlxIn1−xSb Strained Layer Structures
Published online by Cambridge University Press: 10 February 2011
Abstract
Three types of structures were fabricated using molecular beam epitaxy. High-resolution x-ray diffraction measurements demonstrated the high structural quality of InSb/AlxIn1−xSb superlattices grown on InSb and GaAs substrates. Hall effect data revealed the effect of substrate temperature on autocompensation in InSb δ-doped with Si. Two-dimensional electron systems with a high mobility were realized in InSb quantum wells with AlxIn1−xSb barriers δ-doped with Si.
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- Copyright © Materials Research Society 1997