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The Measurement of Boron at Silicon Wafer Surfaces by Neutron Depth Profiling

Published online by Cambridge University Press:  21 February 2011

R.G. Downing ,
J.P. Lavine ,
T.Z. Hossain ,
J.B. Russell  and
G.P. Zenner
R.G. Downing
Affiliation:
Center for Analytical Chemistry, National Institute of Standards and Technology, Gaithersburg, MD 20899
J.P. Lavine
Affiliation:
Research Laboratories, Eastman Kodak Company, Rochester, NY 14650-2008
T.Z. Hossain
Affiliation:
Research Laboratories, Eastman Kodak Company, Rochester, NY 14650-2008
J.B. Russell
Affiliation:
Research Laboratories, Eastman Kodak Company, Rochester, NY 14650-2008
G.P. Zenner
Affiliation:
Research Laboratories, Eastman Kodak Company, Rochester, NY 14650-2008
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Abstract

The thermal neutron reaction 10B(n,α)7Li is used to measure the boron concentration on the surface of silicon wafers. The technique, referred to as neutron depth profiling (NDP), requires no special sample preparation. Boron is determined on the as- received wafers at a level of 1012 to 1013 atoms/cm2. A boron level of about 2×1012 atoms/cm2 is found at the wafer surface after oxidation, epitaxial, or polycrystalline silicon deposition. Additional measurements are given from SIMS measurements of multilayer structures on silicon also showing the presence of boron. Ambient air appears to be a significant source of the boron.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 166: Symposium J – Neutron Scattering for Materials Science , 1989 , 323
Copyright
Copyright © Materials Research Society 1990

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References

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