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Mechanical Properties and Microstructure of AL(1wt%SI) And AL(1wt%SI, 0.5wt%CU) Thin Films. The Role of Diffusional Creep in the Tensile Stress Regime

Published online by Cambridge University Press:  21 February 2011

S. Bader ,
E. M. Kalaugher  and
E. Arzt
S. Bader
Affiliation:
on leave from School of Metallurgy and Science of Materials, Oxford, UK
E. M. Kalaugher
Affiliation:
on leave from School of Metallurgy and Science of Materials, Oxford, UK
E. Arzt
Affiliation:
Max-Planck-Institut für Metallforschung, Stuttgart, Germany
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Abstract

The microstructure and mechanical properties of hot (h) and cold (c) sputtered Al-lwt%Si and Al-lwt%Si-0.5wt%Cu films were studied using transmission electron microscopy and wafer curvature stress measurements.

Stress/temperature curves of all films showed only slight differences in compression on healing once a stable grain size was established. However, on cooling several remarkable differences were observed. These observations cannot be explained by assuming dislocation glide/climb as the dominant relaxation mechanism. The results will be discussed in terms of grain boundary diffusional relaxation (Coble creep), which occurs in addition to dislocation glide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 435
Copyright
Copyright © Materials Research Society 1995

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