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Mechanical Properties of Ion-Implanted Thin Films and Interfaces

Published online by Cambridge University Press:  15 February 2011

G. L. Miller ,
M. Soni ,
M. McDonald ,
E. N. Kaufmann  and
R. L. Fenstermacher
G. L. Miller
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey USA
M. Soni
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey USA
M. McDonald
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey USA
E. N. Kaufmann
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey USA
R. L. Fenstermacher
Affiliation:
Drew University, Madison, New Jersey USA
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Abstract

One of the areas of interest in the ion-beam modification of materials is that of alteration of specifically mechanical properties. To this end a method has been developed allowing in situ investigation of the stress, Young's modulus and mechanical hysteresis of small samples during and following ion-implantation. The samples are typically in the form of ~ 2 mm ⨉ 2 mm squares a few thousand angstroms thick, deposited on a ~ 50µ thick metal support, and forming a mechanical marginal oscillator. The measurement is carried out by flexing the samples at ~ 500 Hz under a servo-stabilized sinusoidal strain with a peak value in the range 0 to ~ 10−3. The accuracy of the method is typically ~ 1% or better for the measured quantities.

Results are presented showing strain dependent (nonlinear) mechanical effects, thermal annealing effects, ion implantation of boron into copper and ion-beam mixing of copper films on aluminum substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 7 , 1981 , 363
Copyright
Copyright © Materials Research Society 1982

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Footnotes

*

Present address: Lawrence Livermore National Laboratory, Livermore, CA 94550.

References

REFERENCES

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