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Mechanisms in the Ion-Assisted Etching of TiSi2

Published online by Cambridge University Press:  25 February 2011

W. L. O'Brien ,
T. N. Rhodin  and
L. C. Rathbun
W. L. O'Brien
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca NY 14853
T. N. Rhodin
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca NY 14853
L. C. Rathbun
Affiliation:
National Nanofabrication Facility, Cornell University, Ithaca NY 14853
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Abstract

A detailed investigation into the mechanisms of the ion-assisted etching of TiSi2 using 1000 eV argon ions and chlorine gas is reported. X-ray photoelectron spectroscopy (XPS) was used to investigate surface product distributions and modulated ion beam mass spectroscopy (MIBMS) was used to investigate gas phase product distributions. Identical experiments were performed on silicon and titanium single crystal substrates. Information on chemical mechanisms during ion-assisted etching was obtained by comparing the product distributions of the three substrates. For each substrate, the di and tetrachlorides were the major gas phase products. These products were emitted with high thermal velocities following a surface residence process. TiCl and TiCl2 products were found on the titanium surface after simultaneous exposure to chlorine and argon ions, but not on the TiSi2 surface. These observations are discussed in terms of specific chemical mechanisms which are critical during ion-assisted etching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 555
Copyright
Copyright © Materials Research Society 1989

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References

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