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Mechanisms of Raman Scattering in doped Indium Nitride

Published online by Cambridge University Press:  01 February 2011

Claire Pinquier ,
François Demangeot ,
Jean Frandon ,
Miguel Gaio ,
Olivier Briot ,
Bénédicte Maleyre ,
Sandra Clur-Ruffenach  and
Bernard Gil
Claire Pinquier
Affiliation:
Laboratoire de Physique des Solides, UMR 5477 CNRS, IRSAMC, 118 Route de Narbonne, Université Paul Sabatier, 31062 Toulouse Cedex 04, France
François Demangeot
Affiliation:
Laboratoire de Physique des Solides, UMR 5477 CNRS, IRSAMC, 118 Route de Narbonne, Université Paul Sabatier, 31062 Toulouse Cedex 04, France
Jean Frandon
Affiliation:
Laboratoire de Physique des Solides, UMR 5477 CNRS, IRSAMC, 118 Route de Narbonne, Université Paul Sabatier, 31062 Toulouse Cedex 04, France
Miguel Gaio
Affiliation:
Laboratoire de Physique des Solides, UMR 5477 CNRS, IRSAMC, 118 Route de Narbonne, Université Paul Sabatier, 31062 Toulouse Cedex 04, France
Olivier Briot
Affiliation:
Groupe d'Etudes des Semi-conducteurs, UMR 5650 CNRS, Place Eugène Bataillon, Université Montpellier II, 34095 Montpellier Cedex 9, France
Bénédicte Maleyre
Affiliation:
Groupe d'Etudes des Semi-conducteurs, UMR 5650 CNRS, Place Eugène Bataillon, Université Montpellier II, 34095 Montpellier Cedex 9, France
Sandra Clur-Ruffenach
Affiliation:
Groupe d'Etudes des Semi-conducteurs, UMR 5650 CNRS, Place Eugène Bataillon, Université Montpellier II, 34095 Montpellier Cedex 9, France
Bernard Gil
Affiliation:
Groupe d'Etudes des Semi-conducteurs, UMR 5650 CNRS, Place Eugène Bataillon, Université Montpellier II, 34095 Montpellier Cedex 9, France
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Abstract

Highly n-doped InN layers are investigated by means of Raman scattering: a strong mode is evidenced near the frequency of the A1(LO) phonon, despite the high conductivity of the films. This observation is interpreted assuming the breakdown of the wave-vector conservation leading to the decoupling of the plasmon from the phonon. The lineshape of the longitudinal optical mode is simulated using the Lindhard-Mermin dielectric function for various light scattering processes: we found that the charge density fluctuation mechanism is dominant, at least in the visible excitation range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E4.8
Copyright
Copyright © Materials Research Society 2005

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References

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