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Mechanisms of Transition-Element-Gettering in Silicon

Published online by Cambridge University Press:  03 September 2012

Dieter Gilles
Dieter Gilles*
Affiliation:
Wacker Chemitronic GmbH, PO Box 1140, D-8263 Burghausen, Germany
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Abstract

The unique properties of 3d-transition elements in silicon are reviewed that are essential for an understanding of gettering phenomena. Transition-element-gettering techniques are divided into two groups, depending on whether or not the dominant gettering mechanism operates during annealing or cooling down of silicon wafers. Experiments that identify the gettering mechanism are presented for oxygen precipitation-induced gettering (internal gettering) as well as phosphorus-diffusion gettering. It is concluded that only the latter technique operates during high-temperature treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 917
Copyright
Copyright © Materials Research Society 1992

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References

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