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Melting and Solidification Dynamics in Zone Melting of Si Films.

Published online by Cambridge University Press:  28 February 2011

D. Dutartre
D. Dutartre*
Affiliation:
Centre National d'Etudes des Télécommunications, B. P 98, 38243, Meylan cedex, France
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Abstract

We discuss the physics involved in the melting and solidification of Silicon On Insulator thin films (SOI) using lamp or graphite strip heaters. The melting front, called “explosive melting”, controls to a large part the final morphological quality of the SOI film. It exhibits instabilities which can (i) nucleate the dewetting of the film, (ii) cause voids, and (iii) produce a poor surface morphology. The morphologies of the solidification fronts are analyzed. We show that, depending on the experimental conditions, different physical mechanisms are responsible for the front breakdown. Thus we propose that the variety of front morphologies results from the variety of the mechanisms involved, and of their combinations with the “faceting effects”.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 157
Copyright
Copyright © Materials Research Society 1988

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