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Memory Effect in RTCVD Epitaxy of Si and SiGe

Published online by Cambridge University Press:  10 February 2011

G. Rittier ,
B Tillack  and
D. Wolansky
G. Rittier
Affiliation:
Institute for Semiconductor Physics, W. Korsing Str. 2, D-15230 Frankfurt (Oder), Germany
B Tillack
Affiliation:
Institute for Semiconductor Physics, W. Korsing Str. 2, D-15230 Frankfurt (Oder), Germany
D. Wolansky
Affiliation:
Institute for Semiconductor Physics, W. Korsing Str. 2, D-15230 Frankfurt (Oder), Germany
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Abstract

In the paper presented the memory effect of boron (B), phosphorus (P), and germanium (Ge) have been studied during the chemical vapor deposition of homoepitaxial Sifilms and heteroepitaxial SiGe- layers in different RTCVD equipment. The CVDprocesses were controlled by surface kinetics on Si substrates from H2, SiH4, GeH4, PH3, and B2H6 at the pressure of 2 mbar in the temperature range of 500°cC–700°C. T1e aufodoping effect from the wafer has been separated from the loading effect of the reactor. The memory effect has been shown to be small for Ge in Si and for B in Si and SiGe. However, a remarkable high memory effect has been found for P, especially in SiGe-films. There are different methods reducing the memory effect in RTCVD-reactors. In-situ gas phase etching by HCI or NF3 gives the best results in the reactors studied here. Based on the obtained results the opportunities and limitations of integrated processing of different Si and SiGe-films (e.g. complete stacks for Si/SiGe-HBT) in the same reaction chamber have been discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 429: Symposium N – Rapid Thermal and Integrated Processing V , 1996 , 379
Copyright
Copyright © Materials Research Society 1996

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References

[1] Schüppen, A., et al.; IEDM-94 Tech. Dig. (1994) 377 Google Scholar
[2] Erben, U., Schumacher, H.; Proc. Int. Workshop “Si based high frequency devices and circuits”, Günzburg, Nov. 1994, p.82 Google Scholar
[3] Greve, D.W.; Materials Science and Engineering B18 (1993) 22 Google Scholar
[4] Harame, D.L., et al.; IEDM-94 Tech. Dig. (1994) 437 Google Scholar
[5] Sato, F., et. al.; IEDM-92 Tech. Dig. (1992) 397 Google Scholar
[6] Ritter, G., et al.; MRS Symp. Proc. Vol.387 (1995)341 Google Scholar
[7] Srinivasan, G.R.; J.Electrochem. Soc. 127(1980)1334 Google Scholar
[8] Murley, P.C., Srinivasan, G.R.; J.Electrochem. Soc. 136(1989)2010 Google Scholar
[9] Köhne, H.; Cryst. Res. Technol. 25(1990)801 Google Scholar
[10] Ventkataraman, V., et al.; Applied Physics Lett. 59(1991)2871 Google Scholar
[11] King, C.A., et. al.; J.Electrochem. Soc. 142(1995)2430 Google Scholar
[12] Wong, M., et. al.; IEEE Trans. Electron Devices, ED–32 (1985)89 Google Scholar
[13] Murota, J., et. al.; J. de Physique IV 5(1995)1165 Google Scholar