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Memory Effects in Manganese Perovskites. Experiment and Theory

Published online by Cambridge University Press:  01 February 2011

Natalia Noginova ,
J. McClure ,
V. Gavrilenko  and
D Novikov
Natalia Noginova
Affiliation:
nnoginova@nsu.edu, NSU, Physics, 700 Park Ave, Norfolk, VA, 23504, United States, (757) 823 8047, (757) 823 9054
J. McClure
Affiliation:
jmcclure@nsu.edu, NSU, Norfolk, VA, 23504, United States
V. Gavrilenko
Affiliation:
vgavrilenko@nsu.edu, NSU, Norfolk, VA, 23504, United States
D Novikov
Affiliation:
Novikov.Dmitri@TIAXLLC.com, TIAX LLC, Cambridge, MA, 02140, United States
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Abstract

Electrically induced quasi-permanent changes in low-field conductivity have been observed in single crystals of LaGa1-xMnxO3 in the broad range of Mn ion concentrations. The memory effects can last for a long time at room temperature and can be easily erased by heating up to Tc ∼300 C. The temperature dependence of the resistivity has a sharp drop around the phase transformation temperature, pointing to the role of phase transformation processes. The switching between high resistance and low resistance states is demonstrated. We explain our experimental data in terms of thermo induced local phase transition with the oxidation of Mn ions. The results of the ab initio calculations of the electron energy structure in Jahn-Teller-distorted and non-distorted cells confirm the mechanism suggested.

Keywords

Mnmemoryoxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 961: Symposium O – Nanostructured and Patterned Materials for Information Storage , 2006 , 0961-O05-10
Copyright
Copyright © Materials Research Society 2007

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References

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