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Metallization Issues in Advanced Ceramic Substrates:- Microstructural. Microchemistry and Thermal Conductivity in Aln

Published online by Cambridge University Press:  21 February 2011

Alistair D. Westwood  and
Michael R. Notis
Alistair D. Westwood
Affiliation:
Department of Materials Science and Engineering, Whitaker Lab #5, Lehigh University, Bethlehem, PA 18015
Michael R. Notis
Affiliation:
Department of Materials Science and Engineering, Whitaker Lab #5, Lehigh University, Bethlehem, PA 18015
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Abstract

Microchemical and microstructural study has been carried out on the tungsten-aluminum nitride (W-AlN) thick film metallization interface. A reaction has been found to occur with the formation of precipitates at AlN grain boundaries and also within the AlN grains; a thin crystalline grain boundary film was also observed. The interface morphology and chemistry is compared to the molybdenum/manganese-aluminum nitride (MoMn-AlN) interface. The effects of morphology and microchemical variations upon thermal conductivity are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 154: Symposium K – Electronic Packaging Materials Science IV , 1989 , 479
Copyright
Copyright © Materials Research Society 1989

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