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Metallurgical and Electrical Characteristics of MoAlx Schottky Contacts to n-GaAs

Published online by Cambridge University Press:  25 February 2011

T. S. Huang ,
J. G. Peng  and
C. C. Lin
T. S. Huang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, TAIWAN, R.O.C.
J. G. Peng
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, TAIWAN, R.O.C.
C. C. Lin
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, TAIWAN, R.O.C.
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Abstract

The interfacial stability, surface morphology and electrical characteristics of MoAlx contacts to n-GaAs have been investigated by using x-ray diffraction, scanning electron microscopy, sheet resistance and current-voltage measurements. The compositions of rf-cosputtered MoAlx films were x = 0.35, 2.7, and 7.0, respectively. The contacts were annealed by rapid thermal processing in the temperature range 500–1000 °C for 20 s. The interfaces of MoAl0.35/GaAs and MoAl2,7/GaAs were stable up to 900 °C, while the interfaces of MoAl7.0/GaAs were less stable and reactions occurred above 800 °C. The variations of sheet resistances and the barrier heights of the Schottky diodes as a function of annealing temperatures can be well correlated to the interfacial stability. The MoAl2.7/n-GaAs diodes exhibited the best stability and were characterized by the highest barrier height (0.98 V) and nearly unit ideality factor (1.11) after annealing at 900 °C. For all thermally stable MoAlx/n-GaAs Schottky diodes, the barrier heights increased with annealing temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 511
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Sands, T., Mater. Sci. Eng. B 1, 289 (1989).Google Scholar
2. Lahav, A. G., Wu, C. S. and Baiocchi, F. A., J. Vac. Sci. Technol. B. 6, 1785 (1988).Google Scholar
3. Haynes, T. E., Chu, W. K., Han, C. C., Lau, S. S. and Picraux, S. T., Appl. Phys. Lett. 53, 2200 (1988).Google Scholar
4. Zhang, L. C., Cheung, S. K., Liang, C. L. and Cheung, N. W., Appl. Phys. Lett. 50, 445 (1987).Google Scholar
5. Lau, S. S., Chen, W. X., Marshall, E. D., Pai, C. S., Tseng, W. F. and Kuech, T. F., Appl. Phys. Lett. 47, 1298 (1985).Google Scholar
6. Bulletin of Alloy Phase Diagram, 1, 71 (1980).Google Scholar
7. Kubaschewski, O. and Alcock, C. B., Metallurgical Thermochemistry, 5th ed. (Pergamon, Oxford, 1979)Google Scholar
8. Svensson, S. P., Landgren, G., Anderson, T. C., J. Appl. Phys. 54, 4474 (1983).Google Scholar
9. Sands, T., Chan, W. K., Chang, C. C., Chase, E. W., and Keramidas, V. K., Appl. Phys. Lett. 52, 1388 (1988).Google Scholar