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Metalorganic Chemical Vapor Deposition of InP by Pulsing Precursors
Published online by Cambridge University Press: 28 February 2011
Abstract
We have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330 °C. The growth process is mass-transport-limited in the temperature range of 420 to 580 °C. It is kinetic-controlled below 400 °C. At 340 °C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.
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