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Metal-Organic Chemical Vapor Deposition of Zn-In-Sn-O and Ga-In-Sn-O Transparent Conducting Oxide Thin Films

Published online by Cambridge University Press:  10 February 2011

A. Wang ,
N.L. Edleman ,
J.R. Babcock ,
T.J. Marks ,
M.A. Lane ,
P.W. Brazis  and
C.R. Kannewurf
A. Wang
Affiliation:
Department of Chemistry
N.L. Edleman
Affiliation:
Department of Chemistry
J.R. Babcock
Affiliation:
Department of Chemistry
T.J. Marks
Affiliation:
Department of Chemistry, tjmarks@casbah.acns.nwu.edu
M.A. Lane
Affiliation:
Department of Electrical and Computer Engineering Materials Research Center, Northwestern University, Evanston, IL 60208-3113
P.W. Brazis
Affiliation:
Department of Electrical and Computer Engineering Materials Research Center, Northwestern University, Evanston, IL 60208-3113
C.R. Kannewurf
Affiliation:
Department of Electrical and Computer Engineering Materials Research Center, Northwestern University, Evanston, IL 60208-3113
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Abstract

The metal-organic chemical vapor deposition (MOCVD) technique has been successfully applied for growth of Sn-doped transparent, conducting Zn-In-O and Ga-In-O films using Sn(acac)2, In(dpm)3, Ga(dpm)3, and Zn(dpm)2, as volatile precursors. The 25 °C electrical conductivity of the as-grown films is as high as 1030 S/cm (n-type, carrier density N = 4.5 × 1020 cm−3, mobility µ = 14.3 cm2/V•s) for the Zn-In-O series and 700 S/cm (n-type, N = 8.1 × 1019 cm−3, µ = 55.2 cm2/V•s) for the Ga-In-O series. After Sn-doping, the Zn-In-O series exhibits 25 'C electrical conductivities as high as 2290 S/cm with a higher carrier mobility, while the Ga-InO series exhibits higher electrical conductivity (3280 S/cm at 25 °C) and much higher carrier density, but with diminished mobility. All films show broader optical transparency windows than that of commercial ITO films. Reductive annealing, carried out at 400-425 °C in a flowing gas mixture of H2(4%) and N2, results in increased carrier density and mobility as high as 64.6 cm2/V•s for films without Sn doping, but lowered carrier density for the Sn-doped films. X-ray diffraction, transmission electron microscopy, micro diffraction, and high-resolution X-ray analysis show that all films with good conductivity have cubic, homogeneously doped In2O3-like crystal structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 345
Copyright
Copyright © Materials Research Society 2000

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