Hostname: page-component-84b7d79bbc-2l2gl Total loading time: 0 Render date: 2024-07-31T21:12:52.141Z Has data issue: false hasContentIssue false
  • English
  • Français

Metastability in Doped Hydrogenated Amorphous Silicon: A Bistable Charge-Trapping Defect Model

Published online by Cambridge University Press:  26 February 2011

Howard M. Branz
Howard M. Branz*
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
Get access

Abstract

An analysis of the phenomenology of a class of bistable charge-trapping defects is undertaken and it is proposed that such defects explain the dominant metastable effects observed in doped hydrogenated amorphous silicon (a-Si:H). The stable configuration of such a defect changes with its charge state and a substantial barrier retards changes in configuration. Reconfiguration is accompanied by carrier trapping or emission. Published data on metastabilities observed in quenched, depletion-bias annealed and light-soaked films of both P-doped and B-doped a-Si:H are reviewed. The experimental observations are consistent with the proposed model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 199
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. See, for example, Stability of Amorphous Silicon Alloy Materials and Devices, AIP Conf. Proc. 157, edited by Stafford, B. L., and Sabisky, E. (AIP, New York, 1987).Google Scholar
2. Ast, D. G. and Brodsky, M. H., in Physics of Semiconductors 1978, Inst. of Physics Conf. Series 434, edited by Wilson, B. L. H. (IOP, London, England, 1979) p. 1159.Google Scholar
3. Street, R.A., Kakalios, J., and Hayes, T.M., Phys. Rev. B34, 3030 (1986).Google Scholar
4. Lang, D. V., Cohen, J. D., and Harbison, J. P., Phys. Rev. Lett 48, 421 (1982).Google Scholar
5. Jang, J. and Lee, C., J. Appl. Phys. 54, 3943 (1983); J. Jang, T.M. Xim, J.K. Hyun, J.H. Yoon, and C. Lee, J. Non-Cryst. Solids 59–60, 429 (1983).Google Scholar
6. Smith, Z.E. and Wagner, S., Phys. Rev. B 32, 5510 (1985).CrossRefGoogle Scholar
7. Adler, D., Solar Cells 9, 133 (1983).CrossRefGoogle Scholar
8. Crandall, R.S., Phys. Rev. B 36, 2645 (1987).Google Scholar
9. Branz, H.M. Phys. Rev. B, in press.Google Scholar
10. Chantre, A. and Bois, D., Phys. Rev. B31, 7979 (1985).CrossRefGoogle Scholar
11. Chantre, A., Phys. Rev. B32, 3687 (1985).CrossRefGoogle Scholar
12. Song, L.W., Zhan, X.D., Benson, B.W., and Watkins, C.D., Phys. Rev. Lett., 60, 460 (1988).Google Scholar
13. Lang, D.V., in Deep Centers in Semiconductors, edited by Pantelides, S.T. (Cordon and Breach, New York, 1986), p. 489.Google Scholar
14. Stavola, M., Levinson, M., Benton, J.L., and Kimerling, L.C., Phys. Rev. B 30, 832 (1984).CrossRefGoogle Scholar
15. Levinson, M., Stavola, M., Besomi, P., and Bonner, W.A., Phys. Rev. B 30, 5817 (1984).Google Scholar
16. Branz, H. M., Capuder, K., Lyons, E. H., Haggerty, J. S., and Adler, D., Phys. Rev. B 36, 7934 (1987).Google Scholar
17. Bar-Yam, Y., Adler, D., and Joannopoulos, J. D., in Stability of Amorphous Silicon Alloy Materials and Devices, AIP Conf. Proc. 157, edited by Stafford, B. L. and Sabisky, E. (AIP, New York, 1987), p.Google Scholar
18. Street, R. A. and Kakalios, J., Philos. Mag. B54, L21 (1986).Google Scholar
19. Shockley, W. and Moll, J., Phys. Rev. 119, 1480 (1960); Y. Bar-Yam, D. Adler, and J. Joannopoulos, Phys. Rev. Lett. 57, 467 (1986).CrossRefGoogle Scholar
20. Branz, H. M., Silver, M., and Adler, D., Philos. Mag. B 57, 271 (1988).Google Scholar
21. Jang, J., Park, S.C., Kim, S.C., and Lee, C., Appi. Phys. Lett. 51, 1804 (1987).Google Scholar
22. Kakalios, J. and Street, R. A., Phys. Rev. B34, 6014 (1986).Google Scholar
23. Street, R. A., Hack, M., and Jackson, W. B., Phys. Rev. B, in press.Google Scholar