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Metastable Changes in the Photoconductive Properties of Microcrystalline Silicon Upon Heat Treatment

Published online by Cambridge University Press:  01 February 2011

R. Brüggemann
R. Brüggemann*
Affiliation:
Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg, Germany, Email:rudi.brueggemann@uni-oldenburg.de
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Abstract

We demonstrate that metastable changes or instabilities in the dark conductivity of microcrystalline silicon upon heat treatment and ambient conditions, which have been reported in the literature, are accompanied by changes in the photoconductivity or the majority-carrier mobility-lifetime product. The minority-carrier mobility-lifetime product and sub-gap absorption appear to be much less affected by different heat treatment procedures and ambient conditions. The observations can be related to Fermi-level induced change in defect occupancy by which the effective density of recombination centres is reduced for electrons but remains the same for holes. Minority carrier properties seem to be better suited as an indicator for sample quality and for comparison of microcrystalline silicon samples from different laboratories.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A5.1
Copyright
Copyright © Materials Research Society 2005

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