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Metastable changes of the electrical conductivity in microcrystalline silicon

Published online by Cambridge University Press:  17 March 2011

N. H. Nickel  and
M. Rakel
N. H. Nickel
Affiliation:
Hahn-Meitner-Institut Berlin, Kekuléstr. 5, D-12489 Berlin, Germany
M. Rakel
Affiliation:
Hahn-Meitner-Institut Berlin, Kekuléstr. 5, D-12489 Berlin, Germany
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Abstract

The temperature dependence of the dark conductivity, σD, of as-grown and H depleted µproportional σc-Si was measured. While σD of the H depleted samples did not exhibit any influence of thermal treatment prior to the measurements, in as-grown σproportional µc-Si the dark conductivity increased by 2 orders of magnitude below 300 K upon rapid thermal quenching. The frozen-in state is reversible and an anneal at 440 K followed by a slow cool completely restores the initial state. The time and temperature dependence of the relaxation of the quenched-in state reveals two competing processes. At short times σD increases due to the activation of a donor complex and at long times σD decreases due to the dissociation of bond-center H complexes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A28.3
Copyright
Copyright © Materials Research Society 2001

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References

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