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Mev Ion Induced Modification of The Native Oxide of Silicon

Published online by Cambridge University Press:  26 February 2011

R.L. Headrick  and
L.E. Seiberling
R.L. Headrick
Affiliation:
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104
L.E. Seiberling
Affiliation:
Department of Physics, University of Pennsylvania, Philadelphia, PA 19104
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Abstract

We have studied the native oxide of silicon (110) and the changes roduced by MeV ion bombardment using transmission ion channeling of 5.9 MeV 9Be, and Elastic Recoil Detection Analysis (ERDA). Transmission channeling was used to measure interfacial nonregistered Si and adsorbed C and 0. ERDA was used to measure the surface concentration of H. MeV ions were found to cause an increase in the interfacial nonregistered silicon which saturates at approximately one monolayer. Rapid desorption of hydrogen was observed. The effect of 2 keV electrons on the silicon native oxide was also studied by Auger Electron Spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 51: Symposium A – Beam-Solid Interactions and Phase Transformations , 1985 , 363
Copyright
Copyright © Materials Research Society 1985

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References

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