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Micro-Crystalline Silicon in Image Sensor

Published online by Cambridge University Press:  28 February 2011

B. W. Park ,
J. I. Choi ,
C. W. Hur ,
T. K. Oh  and
I. K. Kang
B. W. Park
Affiliation:
Advanced Research Lab. 3, GoldStar Central Research Laboratory, 16 Woomyeon-Dong, Seocho-Gu, Seoul, 137–140, Korea.
J. I. Choi
Affiliation:
Advanced Research Lab. 3, GoldStar Central Research Laboratory, 16 Woomyeon-Dong, Seocho-Gu, Seoul, 137–140, Korea.
C. W. Hur
Affiliation:
Advanced Research Lab. 3, GoldStar Central Research Laboratory, 16 Woomyeon-Dong, Seocho-Gu, Seoul, 137–140, Korea.
T. K. Oh
Affiliation:
Advanced Research Lab. 3, GoldStar Central Research Laboratory, 16 Woomyeon-Dong, Seocho-Gu, Seoul, 137–140, Korea.
I. K. Kang
Affiliation:
Advanced Research Lab. 3, GoldStar Central Research Laboratory, 16 Woomyeon-Dong, Seocho-Gu, Seoul, 137–140, Korea.
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Abstract

Amorphous semiconductors play a major role in the field of electronic imaging. The function of an image sensor is to generate an electrical signal corresponding to the light distribution in the optical image. The photodiodes convert light into electrical signal. We investigated the linear image sensor driven by thin film transistor as an switching element, with each photodiode connected to the corresponding thin film transistor. The photo/dark conductivity of photodiode are compared in the case of amorphous silicon and microcrystalline. The influences in contact resistance between microcrystalline n+ layer and the source/drain metal electrode, electron mobility, threshold voltage, and on-off current ratio of thin film transistor with intrinsic microcrystalline silicon channel layer were also investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 609
Copyright
Copyright © Materials Research Society 1993

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