Article contents
Microscopic Identification of Optical Defects in Silicon by Photoluminescence
Published online by Cambridge University Press: 28 February 2011
Abstract
The paper reviews isotope effects observed in the photoluminescence (or absorption) of deep defects in silicon introduced by irradiation damage, heating, quenching or during crystal growth. Three examples are discussed in more detail where photoluminescence methods, partially in combination with other analytical methods, have led to microscopic defect models.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1985
References
- 3
- Cited by