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Microstructure and Kinetic Analysis of the Initial Stages of SiC Formation in a Rapid Thermal Processor

Published online by Cambridge University Press:  28 February 2011

Ki-Bum Kim ,
Jimmy C. Liao ,
Brad J. Burrow  and
Eileen A. Sullivan
Ki-Bum Kim
Affiliation:
Philips R&D Center-Signetics Company, Sunnyvale, CA 94305
Jimmy C. Liao
Affiliation:
Peak Systems Inc., Fremont, CA 94538
Brad J. Burrow
Affiliation:
Philips R&D Center-Signetics Company, Sunnyvale, CA 94305
Eileen A. Sullivan
Affiliation:
Philips R&D Center-Signetics Company, Sunnyvale, CA 94305
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Abstract

We have investigated the evolution of the microstructure, growth modes, and growth kinetics of β-SiC in a rapid thermal processor using FTIR, ESCA, and TEM. SiC layers were formed by reacting C2H4 with Si substrates between 900 and 1300°C at 5 torr. We found that SiC forms discrete nuclei at 900°C, a mixture of discrete nuclei with a thin β-SiC layer in between those nuclei at around 1000°C, and a continuous β-SiC layer above 1100°C. In all cases, β-SiC grows epitaxially on Si substrates. In addition, we identified that a graphitic carbon layer is formed on top of a continuous β-SiC layer. The thickness of the SiC layer was deduced from the integrated absorption spectra of FTIR and measured from the high resolution cross-sectional TEM micrographs. Kinetic data indicate that SiC grows rapidly at the initial stages of reaction. The growth rate, however, is retarded significantly as the reaction proceeds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 247
Copyright
Copyright © Materials Research Society 1991

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