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Microstructure and Properties of Native Insulators Formed on Single Crystal Germanium

Published online by Cambridge University Press:  26 February 2011

O. J. Gregory ,
E. E. Crisman ,
J. Severns  and
P. J. Stiles
O. J. Gregory
Affiliation:
Chemical Engineering Dept., University of Rhode Island, Kingston, RI 02881
E. E. Crisman
Affiliation:
Dept. of Physics/Div. of Engineering, Brown University, Providence, RI 02912
J. Severns
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
P. J. Stiles
Affiliation:
Dept. of Physics/Div. of Engineering, Brown University, Providence, RI 02912
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Abstract

The phases, morphologies and microstructures of native oxides and nitrides, grown on the vicinal planes of germanium, are discussed. Thermal oxides, formed under high pressure, were shown to be primarily amorphous for (100) and (110) oriented substrates and intermixed with a crystalline hexagonal phase on the (111) surfaces. Thermal treatments, in one atmosphere of flowing ammonia gas, converted oxide films to mixtures of nitrides and oxynitrides with the nitrides found to be combinations of a- and β-Ge3N4. The α-phase formed from condensation of vapors above the surface whereas the β-phase was a solid-solid reaction product which initiates at the oxide/germanium interface. These two processes appeared to proceed independently of each other. Results of low angle X-ray diffraction (XRD), far infrared transmission (FIRT), scanning transmission electron microscopy (STEM) and X-ray photoelectron spectroscopy (XPS) are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54 , 1985 , 593
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Rosenberg, J., Proceedings of Device Research Conference, Burlington, Vermont, VA-8, June, 1983.Google Scholar
2. Hock, M. and Johnson, H. L., J. Chem. Phys. 21, 1376 (1954).Google Scholar
3. Jolly, W. J. and Latimer, W. M., Amer, J.. Chem. Soc. 74, 5757 (1952).Google Scholar
4. Ercil, Y. M., Ph.D. Thesis, Brown University, Providence, RI (1981).Google Scholar
5. Crisman, E. E., Ercil, Y. M., Loferski, J. J. and Stiles, P. J., J. Electrochem. Soc. 129 (8), 1845 (1982).Google Scholar
6. Grieveson, P., Jack, K. H. and Wild, S., Special Ceramics Vol. 4, edited by Popper, P., 237, (British Ceramic Research Association, 1968).Google Scholar
7. Wild, S., Grieveson, P. and Jack, K. H., Special Ceramics Vol. 5, edited by Popper, P., 385, (British Ceramic Research Association, 1972).Google Scholar
8. Johnson, W. C., J. Am. Chem. Soc. 52, 5161 (1930).Google Scholar
9. Rosenberg, J. J., Ph.D. Thesis, Columbia University (1983).Google Scholar
10. Crisman, E. E., Ph.D. Thesis, Brown University, Providence, RI (1984).Google Scholar
11. Hua, Q., Rosenberg, J., Ye, J. and Yang, E. S., J. Appl. Phys. 53 (12), 969 (1982).Google Scholar
12. Raider, S. I., Gdula, R. A. and Petrak, J. R., Appl. Phys. Lett. 22, 150 (1975).Google Scholar
13. Kooi, E., Van Lierop, J. G. and Appels, J. A., J. Electrochem. Soc. 123, 1117 (1976).Google Scholar
14. Crisman, E. E., Gregory, O. J. and Stiles, P. J., J. Electrochem. Soc. 131 (8), 1896 (1984).Google Scholar
15. Gregory, O. J., Crisman, E. E. and Stiles, P. J., presented at the 1984 AICHE Symposium on Interfacial Phenomena in the Semiconductor Industry, San Francisco, California (November, 1984).Google Scholar
16. Ito, J., Nozaki, T. and Ishikawa, H., J. Electrochem. Soc. 127, 2053 (1980).Google Scholar
17. Nagai, H., Rev. of Electrical Communications Lab. 22 (11–12), 1043 (1974).Google Scholar
18. Igarashi, Y., Kerumada, K. and Niimi, T., Jap. J. Appl. Phys. 300 (1982).Google Scholar
19. Nagai, H. and Niimi, T., J. Electrochem. Soc. 115, 671 (1968).Google Scholar